A 800 V dual conduction paths segmented anode LIGBT with low specific on-resistance and small shift voltage

A dual conduction paths segmented anode lateral insulated-gate bipolar transistor （DSA-LIGBT） which uses triple reduced surface field （RESURF） technology is proposed. Due to the hybrid structures of triple RESURF LDMOS （T-LDMOS） and traditional LIGBT, firstly, a wide p-type anode is beneficial to th...

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Bibliographic Details
Published in:Journal of semiconductors 2014-05, Vol.35 (5), p.36-41
Main Author: 毛焜 乔明 张波 李肇基
Format: Article
Language:English
Subjects:
Anodes
Bipolar transistors
Breakdown
Electric potential
Extraction
Hybrid structures
LIGBT
RESURF
Semiconductors
Voltage
传导
偏移电压
导通电阻
绝缘栅双极晶体管
路径
阳极电压
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Summary:A dual conduction paths segmented anode lateral insulated-gate bipolar transistor （DSA-LIGBT） which uses triple reduced surface field （RESURF） technology is proposed. Due to the hybrid structures of triple RESURF LDMOS （T-LDMOS） and traditional LIGBT, firstly, a wide p-type anode is beneficial to the small shift voltage （VST） and low specific on-resistance （Ron,sp） when the anode voltage （VA） is larger than VST. Secondly, a wide n-type anode and triple RESURF technology are used to get a low Ron,sp when VA is less than VST. Meanwhile, it can accelerate the extraction of electrons, which brings a low turn-off time （Toff）. Experimental results show that： VST is only 0.9 V, Ron,sp （Ron × Area） are 11.7 and 3.6 Ω · mm^2 when anode voltage VA equals 0.9 and 3 V, respectively, the breakdown voltage reaches to 800 V and Toff is only 450 ns.
ISSN:1674-4926
DOI:10.1088/1674-4926/35/5/054004