A novel SOI high-voltage SJ-pLDMOS based on self-adaptive charge balance

A new SOl self-balance （SB） super-junction （S J） pLDMOS with a self-adaptive charge （SAC） layer and its physical model are presented. The SB is an effective way to realize charges balance （CB）. The substrate-assisted depletion （SAD） effect of the lateral SJ is eliminated by the self-adaptive inversi...

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Bibliographic Details
Published in:Journal of semiconductors 2014-02, Vol.35 (2), p.42-46
Main Author: 吴丽娟 章文通 张波 李肇基
Format: Article
Language:English
Subjects:
3D模拟
Balancing
Breakdown
Charge
Electric potential
Semiconductors
Simulation
SOI
Three dimensional
Voltage
击穿电压
动态自适应
物理模型
电荷平衡
自适应逆
高压
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Summary:A new SOl self-balance （SB） super-junction （S J） pLDMOS with a self-adaptive charge （SAC） layer and its physical model are presented. The SB is an effective way to realize charges balance （CB）. The substrate-assisted depletion （SAD） effect of the lateral SJ is eliminated by the self-adaptive inversion electrons provided by the SAC. At the same time, high concentration dynamic self-adaptive electrons effectively enhance the electric field （EI） of the dielectric buried layer and increase breakdown voltage （BV）. E1 = 600 V/μm and BV =- 237 V are obtained by 3D simulation on a 0.375-μm-thick dielectric layer and a 2.5-μm-thick top silicon layer. The optimized structure realizes the specific on resistance （Ron,sp） of 0.01319Ω·cm2, FOM （FOM = BV2/R p） of 4.26 MW/cm2 under a 11 μm length （Ld） drift region.
ISSN:1674-4926
DOI:10.1088/1674-4926/35/2/024004