Influence of oxygen content on the crystallinity of MgO layers in magnetic tunnel junctions

With RF sputtering process, Si/Si02/Ta/Ru/Ta/CoFeB/MgO/CoFeB/Ta/Ru structure has been grown on Si （100） substrate. Attempting different targets and adjusting the oxygen dose, the crystallization quality of the MgO layer is studied. The X-ray diffraction measurements demonstrate that crystal structur...

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Bibliographic Details
Published in:Journal of semiconductors 2014-08, Vol.35 (8), p.48-51
Main Author: 娄永乐 张玉明 徐大庆 郭辉 张义门 李妤晨
Format: Article
Language:English
Subjects:
Crystal lattices
Crystallization
Lattice parameters
Magnesium oxide
MgO
Semiconductors
Silicon substrates
Si（100）
Sputtering
Tantalum
垂直磁各向异性
晶体结构
氧含量
磁性隧道结
结晶性能
结晶质量
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Summary:With RF sputtering process, Si/Si02/Ta/Ru/Ta/CoFeB/MgO/CoFeB/Ta/Ru structure has been grown on Si （100） substrate. Attempting different targets and adjusting the oxygen dose, the crystallization quality of the MgO layer is studied. The X-ray diffraction measurements demonstrate that crystal structure and crystallization quality of MgO layers are related to the type of target and concentration of oxygen in sputtering process. With the method sputtering Mg in an ambient flow of oxygen, not only the crystallization quality of a normal MgO layer with lattice constant of 0.421 nm is improved, but also a new MgO crystal with lattice constant of 0.812 nm is formed and the perpendicular magnetic anisotropy of CoFeB is enhanced. Also it is found that crystallization quality for both the normal MgO and new MgO is more improved with MgO target and same oxygen dose, which means that this new method is helpful to form a new structure of MgO annealed at 400 ℃ in vacuum. with lattice constant of 0.812 nm. All of the samples were
ISSN:1674-4926
DOI:10.1088/1674-4926/35/8/083005