Temperature dependence of latch-up effects in CMOS inverter induced by high power microwave

• Published in: Journal of semiconductors 2014-08, Vol.35 (8), p.115-120
• Main Author: 于新海 柴常春 任兴荣 杨银堂 席晓文 刘阳
• Format: Article
• Language: English
• Subjects: Ambient temperature; CMOS; CMOS反相器; Constants; Inverters; Latch-up; Mathematical analysis; Microwaves; Semiconductors; 温度恒定; 环境温度; 电流特性; 脉冲宽度; 诱导; 闩锁效应; 高功率微波
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/35/8/084011

The temperature dependence of the latch-up effects in a CMOS inverter based on 0.5 μm technology caused by high power microwave （HPM） is studied. The malfunction and power supply current characteristics are revealed and adopted as the latch-up criteria. The thermal effect is shown and analyzed in detail. CMOS in- verters operating at high ambient temperature are confirmed to be more susceptible to HPM, which is verified by experimental results from previous literature. Besides the dependence of the latch-up triggering power P on the ambient temperature T follows the power-law equation P = ATβ. Meanwhile, the ever reported latch-up delay time characteristic is interpreted to be affected by the temperature distribution. In addition, it is found that the power threshold increases with the decrease in pulse width but the degree of change with a certain pulse width is constant at different ambient temperatures. Also, the energy absorbed to cause latch-up at a certain temperature is basically sustained at a constant value.