Transition Gibbs free energy level cross section and formulation of carrier SRH recombination rate

The transition among multiple charging states of a semiconductor＇s localized intrinsic/impurity defects is considered as phase transitions, and the concept of transition Gibbs free energy level （TGFEL） is proposed. Dependence of the cross section of TGFEL on its charge state is discussed. Introducti...

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Bibliographic Details
Published in:Journal of semiconductors 2013-12, Vol.34 (12), p.9-12
Main Author: Chin, Ken K.
Format: Article
Language:English
Subjects:
Charging
Cross sections
Cross sections (physics)
Defects
Devices
Entropy
Gibbs free energy
Semiconductors
SRH
充电状态
半导体物理
吉布斯自由能
复合率
横截面
水
载体
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Summary:The transition among multiple charging states of a semiconductor＇s localized intrinsic/impurity defects is considered as phase transitions, and the concept of transition Gibbs free energy level （TGFEL） is proposed. Dependence of the cross section of TGFEL on its charge state is discussed. Introduction of TGFEL to replace acti- vation energy has fundamentally important consequences for semiconductor physics and devices. TGFEL involves entropy. What is to be included and not included in the entropy term consistently for all defect levels is an unre- solved open question, related to correct interpretation of various experimental data associated with various defect levels. This work is a first step towards resolving this question.
ISSN:1674-4926
DOI:10.1088/1674-4926/34/12/122001