Hot-carrier effects on irradiated deep submicron NMOSFET

We investigate how F exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irradiated devices are greater than those without irradiation, especially for narrow cha...

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Bibliographic Details
Published in:Journal of semiconductors 2014-07, Vol.35 (7), p.52-55
Main Author: 崔江维 郑齐文 余学峰 丛忠超 周航 郭旗 文林 魏莹 任迪远
Format: Article
Language:English
Subjects:
Channels
Charge
Degradation
Devices
Electric charge
Ionization
Irradiation
NMOSFET
NMOS器件
Semiconductors
几何形状
深亚微米
热载流子效应
热载流子退化
辐照
陷阱电荷
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Summary:We investigate how F exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irradiated devices are greater than those without irradiation, especially for narrow channel device. The reason is attributed to charge traps in STI, which then induce different electric field and impact ionization rates during hotcarrier stress.
ISSN:1674-4926
DOI:10.1088/1674-4926/35/7/074004