Temperature dependence of InAs/GaAs quantum dots solar photovoltaic devices

This paper presents the temperature dependence measurements characterisation of several InAs/GaAs quantum dots （QDs） solar cell devices. The devices with cylindrical geometry were fabricated and characterised on-wafer under 20 suns in a temperature range from 300°K to 430°K. The temperature dependen...

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Bibliographic Details
Published in:Journal of semiconductors 2014-05, Vol.35 (5), p.21-25
Main Authors: Garduno-Nolasco, E., Missous, M., Donoval, D., Kovac, J., Mikolasek, M.
Format: Article
Language:English
Subjects:
Density
Devices
GaAs
InAs
Indium arsenides
Open circuit voltage
Quantum dots
Semiconductors
Solar cells
Temperature dependence
发电设备
太阳能光伏
太阳能电池
温度依赖性
短路电流密度
量子点
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Summary:This paper presents the temperature dependence measurements characterisation of several InAs/GaAs quantum dots （QDs） solar cell devices. The devices with cylindrical geometry were fabricated and characterised on-wafer under 20 suns in a temperature range from 300°K to 430°K. The temperature dependence parameters such as open circuit voltage, short circuit density current, fill factor and efficiency are studied in detail. The increase of temperature produces an enhancement of the short circuit current. However, the open circuit voltage is degraded because the temperature increases the recombination phenomena involved, as well as reducing the effective band gap of the semiconductor.
ISSN:1674-4926
DOI:10.1088/1674-4926/35/5/054001