Indium arsenide (InAs) single and dual quantum-well heterostructure FinFETs

This work presents experimental demonstration of InAs single and dual quantum well (DQW) heterostructure FinFETs (FF) and their superior performance over In 0.7 Ga 0.3 As QW FF. Peak mobility of 3,531 cm 2 /V-sec and 3,950 cm 2 /V-sec are obtained for InAs single QW FF and InAs DQW FF, respectively,...

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Bibliographic Details
Main Authors: Thathachary, Arun V., Agrawal, N., Bhuwalka, K. K., Cantoro, M., Heo, Y.-C, Lavallee, G., Maeda, S., Datta, S.
Format: Conference Proceeding
Language:English
Subjects:
Channels
FinFETs
Heterostructures
High aspect ratio
III-V semiconductor materials
Indium arsenides
Indium phosphide
Integrated circuits
Logic gates
Quantum wells
Silicon
Substrates
Very large scale integration
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Summary:This work presents experimental demonstration of InAs single and dual quantum well (DQW) heterostructure FinFETs (FF) and their superior performance over In 0.7 Ga 0.3 As QW FF. Peak mobility of 3,531 cm 2 /V-sec and 3,950 cm 2 /V-sec are obtained for InAs single QW FF and InAs DQW FF, respectively, at a fin width (W fin ) of 40nm and L G = 2μm. Peak g m of 480 μS/μm, 541 μS/um; I DSAT of 121 μA/μm, 135 μA/μm; and SS SAT of 101 mV/dec,103 mV/dec is demonstrated for single and DQW FF, respectively, at L G =300nm (V D = 0.5V, I OFF =100 nA/μm). Finally, InAs DQW is shown to be a viable alternate channel for high aspect ratio n-channel FinFET.
ISSN:0743-1562
2158-9682
DOI:10.1109/VLSIT.2015.7223677