Demonstration of an MgO based anti-fuse OTP design integrated with a fully functional STT-MRAM at the Mbit level

STT-MRAM technology has been attracting renewed attention since the embedability of a working STT-MRAM design has been demonstrated [1]. In this paper we expand on the versatility of STT-MRAM by demonstrating the conversion of a standard STT-MRAM cell to a One Time Programmable (OTP) anti-fuse cell....

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Main Authors: Guenole Jan, Thomas, Luc, Son Le, Yuan-Jen Lee, Huanlong Liu, Jian Zhu, Ru-Ying Tong, Keyu Pi, Yu-Jen Wang, Shen, Dongna, Renren He, Haq, Jesmin, Teng, Jeffrey, Vinh Lam, Annapragada, Rao, Zhong, Tom, Torng, Terry, Po-Kang Wang
Format: Conference Proceeding
Language:English
Subjects:
Arrays
Breakdown voltage
Chips (electronics)
Devices
Dielectric breakdown
Electric potential
embedded-NVM
OTP
Oxides
Programming
Resistance
Sensors
STT-MRAM
Very large scale integration
Voltage dividers
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Summary:STT-MRAM technology has been attracting renewed attention since the embedability of a working STT-MRAM design has been demonstrated [1]. In this paper we expand on the versatility of STT-MRAM by demonstrating the conversion of a standard STT-MRAM cell to a One Time Programmable (OTP) anti-fuse cell. Both designs are integrated at the Mbit level on a single chip using the same magnetic stack, processing and CMOS cell design. A single BEOL mask change can convert an STT-MRAM device to an OTP design by simply reducing its size. The increased resistance yields larger voltage drop across the device, due to the voltage divider effect in the 1T-1MTJ cell and is sufficient to trigger reliable dielectric breakdown of the oxide tunnel barrier, effectively shorting the device. In this paper we demonstrate the seamless integration of an OTP based on STT-MRAM and 100% programming and reading yield at the Mbit level.
ISSN:0743-1562
2158-9682
DOI:10.1109/VLSIT.2015.7223663