Correlation between electrical conductivity-optical band gap energy and precursor molarities ultrasonic spray deposition of ZnO thin films

• Published in: Journal of semiconductors 2013-11, Vol.34 (11), p.15-19
• Main Authors: Benramache, Said, Belahssen, Okba, Guettaf, Abderrazak, Arif, Ali
• Format: Article
• Language: English
• Subjects: Concentration (composition); Electrical conductivity; Electrical resistivity; Energy gap; Precursors; Resistivity; Thin films; Zinc oxide; ZnO薄膜; 光学带隙; 前体; 喷雾沉积; 摩尔浓度; 电导率; 能量; 超声技术
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/34/11/113001

ZnO thin films were deposited using the simple, flexible and cost-effective spray ultrasonic technique at different precursor molarities values. The films were deposited on a glass substrate at 350℃. This paper is to present a new approach to the description of correlation between electrical conductivity and optical gap energy with precursor molarity of ZnO thin films. The ZnO films exhibit higher electrical n-type semiconductors, whose band gap energy increased from 3.08 to 3.37 eV with an increasing of precursor molarity of 0.05 to 0.1 M. The maximum value of electrical conductivity of the films is 7.96 （S2.cm）-1 obtained in the ZnO thin film for precursor molarity 0.125 M. The correlation between the electrical and the optical properties with the precursor molarity suggests that the electrical conductivity of the films is predominantly influenced by the band gap energy and the precursor molarity. The measurement of the electrical conductivity of the films with correlation is equal to the experimental with the error is about 1% in the higher conductivity.