Low-temperature plasma-enhanced chemical vapour deposition of transfer-free graphene thin films

Large area transfer free graphene films were deposited at low substrate temperature of 380°C by plasma-enhanced chemical vapour deposition (PECVD) using a nickel buffer layer. The Raman spectrum indicated a structure of highly disordered sp2-C. The current–voltage characteristics of the films showed...

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Bibliographic Details
Published in:Materials letters 2015-11, Vol.158, p.436-438
Main Authors: Othman, Maisara, Ritikos, Richard, Muhammad Hafiz, Syed, Khanis, Noor Hamizah, Abdul Rashid, Nur Maisarah, Abdul Rahman, Saadah
Format: Article
Language:English
Subjects:
Conductivity
Deposition
Electrical resistivity
Graphene
Nickel
PECVD graphene
Plasma enhanced chemical vapor deposition
Raman
Thin films
Transmittance
Wavelengths
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Summary:Large area transfer free graphene films were deposited at low substrate temperature of 380°C by plasma-enhanced chemical vapour deposition (PECVD) using a nickel buffer layer. The Raman spectrum indicated a structure of highly disordered sp2-C. The current–voltage characteristics of the films showed ohmic behaviour with sheet resistance of ~10.1kΩ/sq and transmittance of 70% at wavelength of 550nm. This transfer-free graphene growth technique is reproducible and is promising for applications in devices. •Graphene film was prepared using rf-PECVD technique.•Ni layer was used as a buffer layer to form a thin layer of carbon film on substrate.•The optical and electrical properties of the film is comparable to few-layered graphene.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2015.06.039