A 30-dB 1-16-GHz low noise IF amplifier in 90-nm CMOS

This paper presents a high-gain wideband low-noise IF amplifier aimed for the ALMA front end system using 90-nm LP CMOS technology.A topology of three optimized cascading stages is proposed to achieve a flat and wideband gain.Incorporating an input inductor and a gate-inductive gain-peaking inductor...

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Bibliographic Details
Published in:Journal of semiconductors 2013-08, Vol.34 (8), p.133-143
Main Author: 曹佳 李智群 李芹 陈亮 张萌 吴晨健 王冲 王志功
Format: Article
Language:English
Subjects:
Amplification
CMOS
CMOS技术
Gain
Inductors
Intermediate frequency amplifiers
Noise levels
Semiconductors
Wideband
中频放大器
低噪声
前端系统
噪声系数
拓扑结构
纳米
高增益
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Summary:This paper presents a high-gain wideband low-noise IF amplifier aimed for the ALMA front end system using 90-nm LP CMOS technology.A topology of three optimized cascading stages is proposed to achieve a flat and wideband gain.Incorporating an input inductor and a gate-inductive gain-peaking inductor,the active shunt feedback technique is employed to extend the matching bandwidth and optimize the noise figure.The circuit achieves a flat gain of 30.5 dB with 3 dB bandwidth of 1-16 GHz and a minimum noise figure of 3.76 dB.Under 1.2 V supply voltage,the proposed IF amplifier consumes 42 mW DC power.The chip die including pads takes up 0.53 mm~2,while the active area is only 0.022 mm~2.
ISSN:1674-4926
DOI:10.1088/1674-4926/34/8/085010