Monte Carlo study of impact ionization in InSb induced by intense ultrashort terahertz pulses

The electron impact ionization dynamic has been investigated by Monte Carlo method in n-type InSb under the action of single-cycle pulses with 1 ps duration. The threshold electric field of impact ionization has been estimated to be about 8 kV/cm at 80 K. The number of generated carriers increases r...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2015-09, Vol.120 (4), p.1241-1245
Main Authors: Ašmontas, S., Raguotis, R., Bumelienė, S.
Format: Article
Language:English
Subjects:
Carriers
Characterization and Evaluation of Materials
Condensed Matter Physics
Dynamic tests
Indium antimonides
Intermetallics
Ionization
Machines
Manufacturing
Mathematical analysis
Monte Carlo methods
Nanotechnology
Optical and Electronic Materials
Physics
Physics and Astronomy
Processes
Surfaces and Interfaces
Thin Films
Thresholds
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Summary:The electron impact ionization dynamic has been investigated by Monte Carlo method in n-type InSb under the action of single-cycle pulses with 1 ps duration. The threshold electric field of impact ionization has been estimated to be about 8 kV/cm at 80 K. The number of generated carriers increases rapidly with increasing of electric field strength over threshold, and at 100 kV/cm, normalized electron concentration reaches 14. It is found that impact ionization process is dominant energy loss mechanism for hot carriers with energy larger than threshold energy of impact ionization. The results of calculations are compared with available experimental data. The agreement between theoretical calculations and experimental results was obtained.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-015-9322-x