An Effect of Irradiation with Trivalent Boron Ions on Pinning in Bi2Sr2CaCu2O8 Thin Films as Revealed by MWA and Hall-Probe Measurements

Bi 2 Sr 2 CaCu 2 O 8 thin films 200 nm thick were irradiated with 120 keV trivalent boron ions with the dose ranging from 10 11 to 10 14  ion/cm 2 . The critical parameters of the samples prior and after irradiation were monitored by non-resonance modulated microwave absorption and Hall-probe techni...

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Bibliographic Details
Published in:Applied magnetic resonance 2011-05, Vol.40 (3), p.377-386
Main Authors: Panarina, N. Yu, Petukhov, V. Yu, Talanov, Yu. I.
Format: Article
Language:English
Subjects:
Atoms and Molecules in Strong Fields
Boron
Critical current density
Laser Matter Interaction
Magnetic fields
Microwave absorption
Organic Chemistry
Physical Chemistry
Physics
Physics and Astronomy
Pinning
Point defects
Radiation
Radiation dosage
Radiation effects
Solid State Physics
Spectroscopy/Spectrometry
Temperature
Thick films
Thin films
Vortices
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Summary:Bi 2 Sr 2 CaCu 2 O 8 thin films 200 nm thick were irradiated with 120 keV trivalent boron ions with the dose ranging from 10 11 to 10 14  ion/cm 2 . The critical parameters of the samples prior and after irradiation were monitored by non-resonance modulated microwave absorption and Hall-probe techniques. For low doses of 10 11 –10 12  ion/cm 2 , a slight increase in the critical current density and expansion of the area of the non-dissipative transport current flow were revealed. Such results are explained by the formation of separate areas of displaced atoms, which serve as effective pinning centers. The positive effects of irradiation faded away with dose increase of up to 10 13 –10 14  ion/cm 2 . This is due to overlap of radiation-induced defects and weak pinning on them.
ISSN:0937-9347
1613-7507
DOI:10.1007/s00723-011-0212-x