Probing the Bonding and Electronic Structure of Single Atom Dopants in Graphene with Electron Energy Loss Spectroscopy

A combination of scanning transmission electron microscopy, electron energy loss spectroscopy, and ab initio calculations reveal striking electronic structure differences between two distinct single substitutional Si defect geometries in graphene. Optimised acquisition conditions allow for exception...

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Bibliographic Details
Published in:Nano letters 2013-10, Vol.13 (10), p.4989-4995
Main Authors: Ramasse, Quentin M, Seabourne, Che R, Kepaptsoglou, Despoina-Maria, Zan, Recep, Bangert, Ursel, Scott, Andrew J
Format: Article
Language:English
Subjects:
Atomic beam spectroscopy
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Electron energy loss spectroscopy
Electronic structure
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals
Exact sciences and technology
Fine structure
Fullerenes and related materials
diamonds, graphite
Graphene
Materials science
Mathematical analysis
Nanostructure
Physics
Silicon
Specific materials
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Summary:A combination of scanning transmission electron microscopy, electron energy loss spectroscopy, and ab initio calculations reveal striking electronic structure differences between two distinct single substitutional Si defect geometries in graphene. Optimised acquisition conditions allow for exceptional signal-to-noise levels in the spectroscopic data. The near-edge fine structure can be compared with great accuracy to simulations and reveal either an sp3-like configuration for a trivalent Si or a more complicated hybridized structure for a tetravalent Si impurity.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl304187e