Origin of Polytype Formation in VLS-Grown Ge Nanowires through Defect Generation and Nanowire Kinking

We propose layer-by-layer growth mechanisms to account for planar defect generation leading to kinked polytype nanowires. Cs-corrected scanning transmission electron microscopy enabled identification of stacking sequences of distinct polytype bands found in kinked nanowires, and Raman spectroscopy w...

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Bibliographic Details
Published in:Nano letters 2013-08, Vol.13 (8), p.3947-3952
Main Authors: Jeon, Nari, Dayeh, Shadi A, Lauhon, Lincoln J
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Defects
Diamonds
Exact sciences and technology
Fullerenes and related materials
diamonds, graphite
Materials science
Methods of nanofabrication
Morphology
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Nanostructure
Nanowires
Nucleation
Physics
Polytypes
Quantum wires
Specific materials
Stacking
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Description
Summary:We propose layer-by-layer growth mechanisms to account for planar defect generation leading to kinked polytype nanowires. Cs-corrected scanning transmission electron microscopy enabled identification of stacking sequences of distinct polytype bands found in kinked nanowires, and Raman spectroscopy was used to distinguish polytype nanowires from twinned nanowires containing only the 3C diamond cubic phase. The faceting and atomic-scale defect structures of twinned 3C are compared with those of polytype nanowires to develop a common model linking nucleation pinning to nanowire morphology and phase.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl402117b