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Origin of Polytype Formation in VLS-Grown Ge Nanowires through Defect Generation and Nanowire Kinking
We propose layer-by-layer growth mechanisms to account for planar defect generation leading to kinked polytype nanowires. Cs-corrected scanning transmission electron microscopy enabled identification of stacking sequences of distinct polytype bands found in kinked nanowires, and Raman spectroscopy w...
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Published in: | Nano letters 2013-08, Vol.13 (8), p.3947-3952 |
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container_title | Nano letters |
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creator | Jeon, Nari Dayeh, Shadi A Lauhon, Lincoln J |
description | We propose layer-by-layer growth mechanisms to account for planar defect generation leading to kinked polytype nanowires. Cs-corrected scanning transmission electron microscopy enabled identification of stacking sequences of distinct polytype bands found in kinked nanowires, and Raman spectroscopy was used to distinguish polytype nanowires from twinned nanowires containing only the 3C diamond cubic phase. The faceting and atomic-scale defect structures of twinned 3C are compared with those of polytype nanowires to develop a common model linking nucleation pinning to nanowire morphology and phase. |
doi_str_mv | 10.1021/nl402117b |
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source | American Chemical Society:Jisc Collections:American Chemical Society Read & Publish Agreement 2022-2024 (Reading list) |
subjects | Cross-disciplinary physics: materials science rheology Defects Diamonds Exact sciences and technology Fullerenes and related materials diamonds, graphite Materials science Methods of nanofabrication Morphology Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Nanostructure Nanowires Nucleation Physics Polytypes Quantum wires Specific materials Stacking |
title | Origin of Polytype Formation in VLS-Grown Ge Nanowires through Defect Generation and Nanowire Kinking |
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