Ion Implantation of GrapheneToward IC Compatible Technologies

• Published in: Nano letters 2013-10, Vol.13 (10), p.4902-4907
• Main Authors: Bangert, U, Pierce, W, Kepaptsoglou, D. M, Ramasse, Q, Zan, R, Gass, M. H, Van den Berg, J. A, Boothroyd, C. B, Amani, J, Hofsäss, H
• Format: Article
• Language: English
• Subjects: Atomic beam spectroscopy; Compatibility; Cross-disciplinary physics: materials science; rheology; Devices; Exact sciences and technology; Fullerenes and related materials; diamonds, graphite; Graphene; Graphite - chemistry; Ion implantation; Ions - chemistry; Materials science; Microscopy, Electron; Nanostructure; Nanostructures; Physics; Semiconductors; Specific materials; Spectroscopy; Surface Properties
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/nl402812y

Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites.