Ultraviolet Electroluminescence of Light-Emitting Diodes Based on Single n‑ZnO/p-AlGaN Heterojunction Nanowires

We present successful fabrication of single n-ZnO/p-AlGaN heterojunction nanowires with excellent optoelectronic properties. Because of the formation of high-quality interfacial structure, heterojunction nanowire showed a diodelike rectification behavior and an electroluminescence (EL) ultraviolet (...

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Bibliographic Details
Published in:Nano letters 2013-11, Vol.13 (11), p.5046-5050
Main Authors: Tang, Xiaobing, Li, Gaomin, Zhou, Shaomin
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Electroluminescence
Electron states
Electronics
Exact sciences and technology
Excitons and related phenomena
Heterojunctions
Injection current
Materials science
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Nanostructure
Nanowires
Optimization
Optoelectronic devices
Physics
Quantum wires
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Ultraviolet
Zinc oxide
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Summary:We present successful fabrication of single n-ZnO/p-AlGaN heterojunction nanowires with excellent optoelectronic properties. Because of the formation of high-quality interfacial structure, heterojunction nanowire showed a diodelike rectification behavior and an electroluminescence (EL) ultraviolet (UV) emission centered at 394 nm from a single nanowire was observed when the injection current is 4 μA due to high exciton efficiency in the interfacial layer between ZnO and AlGaN. With the increase of the applied current, the EL peak at 5 μA becomes weaker revealing an optimal injection current of less than 5 μA. These results are expected to open up new application possibilities in nanoscale UV light-emitting devices based on single ZnO heterostructure.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl401941g