p‑Type InN Nanowires

In this Letter, we demonstrate that with the merit of nanowire structure and a self-catalytic growth process p-type InN can be realized for the first time by “direct” magnesium (Mg) doping. The presence of Mg acceptor energy levels in InN is confirmed by photoluminescence experiments, and a direct e...

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Bibliographic Details
Published in:Nano letters 2013-11, Vol.13 (11), p.5509-5513
Main Authors: Zhao, S, Le, B. H, Liu, D. P, Liu, X. D, Kibria, M. G, Szkopek, T, Guo, H, Mi, Z
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Crystallization
Dopants
Electronics
Electrons
Energy levels
Exact sciences and technology
Field effect transistors
Indium - chemistry
Magnesium
Magnesium - chemistry
Materials science
Mathematical analysis
Molecular electronics, nanoelectronics
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Nanostructure
Nanostructures - chemistry
Nanotechnology
Nanowires
Nanowires - chemistry
Nitrogen - chemistry
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Photoluminescence
Physics
Quantum wires
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:In this Letter, we demonstrate that with the merit of nanowire structure and a self-catalytic growth process p-type InN can be realized for the first time by “direct” magnesium (Mg) doping. The presence of Mg acceptor energy levels in InN is confirmed by photoluminescence experiments, and a direct evidence of p-type conduction is demonstrated unambiguously by studying the transfer characteristics of InN nanowire field effect transistors. Moreover, the near-surface Fermi-level of InN can be tuned from nearly intrinsic to p-type degenerate by controlling Mg dopant incorporation, which is in contrast to the commonly observed electron accumulation on the grown surfaces of Mg-doped InN films. First-principle calculation using the VASP electronic package further shows that the p-type surface formed on Mg-doped InN nanowires is highly stable energetically.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl4030819