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E sub(1)(A) Electronic Band Gap in Wurtzite InAs Nanowires Studied by Resonant Raman Scattering

We report on resonant Raman experiments carried out on wurtzite InAs nanowires. Resonant conditions have been obtained by tuning either the excitation energy or the band gap through external high pressure at fixed excitation energy. A complete azimuthal study of the Raman spectra with two laser exci...

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Published in:Nano letters 2013-07, Vol.13 (7), p.3011-3016-3011-3016
Main Authors: Zardo, Ilaria, Yazji, Sara, Hormann, Nicolas, Hertenberger, Simon, Funk, Stefan, Mangialardo, Sara, Morkotter, Stefanie, Koblmueller, Gregor, Postorino, Paolo, Abstreiter, Gerhard
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container_issue 7
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container_title Nano letters
container_volume 13
creator Zardo, Ilaria
Yazji, Sara
Hormann, Nicolas
Hertenberger, Simon
Funk, Stefan
Mangialardo, Sara
Morkotter, Stefanie
Koblmueller, Gregor
Postorino, Paolo
Abstreiter, Gerhard
description We report on resonant Raman experiments carried out on wurtzite InAs nanowires. Resonant conditions have been obtained by tuning either the excitation energy or the band gap through external high pressure at fixed excitation energy. A complete azimuthal study of the Raman spectra with two laser excitation lines (2.41 and 1.92 eV) has also been performed on a single wire. The measured E sub(2) super(H) mode resonance indicates that the E sub(1)(A) gap is about 2.4 eV, which is considerably reduced with respect to the zinc-blende InAs E sub(1) gap. These findings confirm recent theoretical calculations of crystal phase induced bandstructure modifications.
doi_str_mv 10.1021/nl304528j
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source American Chemical Society:Jisc Collections:American Chemical Society Read & Publish Agreement 2022-2024 (Reading list)
subjects Band theory
Excitation
Indium arsenides
Lasers
Mathematical analysis
Nanowires
Tuning
Wurtzite
title E sub(1)(A) Electronic Band Gap in Wurtzite InAs Nanowires Studied by Resonant Raman Scattering
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