Influence of double AlN buffer layers on the qualities of GaN films prepared by metal—organic chemical vapour deposition

In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire (0001) substrate with double AlN buffer layers. The buffer layer consists of a low-temperature (LT) AlN layer and a high-temperature (HT) AlN layer that are grown at 600 [degrees]C and 1...

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Bibliographic Details
Published in:Chinese physics B 2012-12, Vol.21 (12), p.126804-1-126804-5
Main Authors: Lin, Zhi-Yu, Zhang, Jin-Cheng, Zhou, Hao, Li, Xiao-Gang, Meng, Fan-Na, Zhang, Lin-Xia, Ai, Shan, Xu, Sheng-Rui, Zhao, Yi, Hao, Yue
Format: Article
Language:English
Subjects:
Aluminum nitride
Buffer layers
Chemical vapor deposition
Dislocation density
Gallium nitrides
Heat treatment
Sapphire
Thin films
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Summary:In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire (0001) substrate with double AlN buffer layers. The buffer layer consists of a low-temperature (LT) AlN layer and a high-temperature (HT) AlN layer that are grown at 600 [degrees]C and 1000 [degrees]C, respectively. It is observed that the thickness of the LT-AlN layer drastically influences the quality of GaN thin film, and that the optimized 4.25-min-LT-AlN layer minimizes the dislocation density of GaN thin film. The reason for the improved properties is discussed in this paper.
ISSN:1674-1056
1741-4199
DOI:10.1088/1674-1056/21/12/126804