Control of Schottky Barriers in Single Layer MoS sub(2) Transistors with Ferromagnetic Contacts

MoS sub(2) and related metal dichalcogenides (MoSe sub(2), WS sub(2), WSe sub(2)) are layered two-dimensional materials that are promising for nanoelectronics and spintronics. For instance, large spin-orbit coupling and spin splitting in the valence band of single layer (SL) MoS sub(2) could lead to...

Full description

Saved in:
Bibliographic Details
Published in:Nano letters 2013-07, Vol.13 (7), p.3106-3110-3106-3110
Main Authors: Chen, Jen-Ru, Odenthal, Patrick M, Swartz, Adrian G, Floyd, George Charles, Wen, Hua, Luo, Kelly Yunqiu, Kawakami, Roland K
Format: Article
Language:English
Subjects:
Barriers
Carrier density
Depletion
Ferromagnetism
Magnesium oxide
Molybdenum disulfide
Nanostructure
Tuning
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:MoS sub(2) and related metal dichalcogenides (MoSe sub(2), WS sub(2), WSe sub(2)) are layered two-dimensional materials that are promising for nanoelectronics and spintronics. For instance, large spin-orbit coupling and spin splitting in the valence band of single layer (SL) MoS sub(2) could lead to enhanced spin lifetimes and large spin Hall angles. Understanding the nature of the contacts is a critical first step for realizing spin injection and spin transport in MoS sub(2). Here, we have investigated Co contacts to SL MoS sub(2) and find that the Schottky barrier height can be significantly decreased with the addition of a thin oxide barrier (MgO). Further, we show that the barrier height can be reduced to zero by tuning the carrier density with back gate. Therefore, the MgO could simultaneously provide a tunnel barrier to alleviate conductance mismatch while minimizing carrier depletion near the contacts. Such control over the barrier height should allow for careful engineering of the contacts to realize spin injection in these materials.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl4010157