Resonant Tunneling in Graphene Pseudomagnetic Quantum Dots

Realistic relaxed configurations of triaxially strained graphene quantum dots are obtained from unbiased atomistic mechanical simulations. The local electronic structure and quantum transport characteristics of y-junctions based on such dots are studied, revealing that the quasi-uniform pseudomagnet...

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Bibliographic Details
Published in:Nano letters 2013-06, Vol.13 (6), p.2692-2697
Main Authors: Qi, Zenan, Bahamon, D. A, Pereira, Vitor M, Park, Harold S, Campbell, D. K, Neto, A. H. Castro
Format: Article
Language:English
Subjects:
Applied sciences
Asymmetry
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Filtering
Fullerenes and related materials
diamonds, graphite
Graphene
Materials science
Molecular electronics, nanoelectronics
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Physics
Quantum dots
Resonant tunneling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Specific materials
Strain
Transport
Valleys
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Summary:Realistic relaxed configurations of triaxially strained graphene quantum dots are obtained from unbiased atomistic mechanical simulations. The local electronic structure and quantum transport characteristics of y-junctions based on such dots are studied, revealing that the quasi-uniform pseudomagnetic field induced by strain restricts transport to Landau level- and edge state-assisted resonant tunneling. Valley degeneracy is broken in the presence of an external field, allowing the selective filtering of the valley and chirality of the states assisting in the resonant tunneling. Asymmetric strain conditions can be explored to select the exit channel of the y-junction.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl400872q