Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer

An AlGaN/GaN superlattice grown on the top of a GaN buffer induces the broadening of the full width at half maximum of (102) and (002) X-ray diffraction rocking curves. With an increase in the Si-doped concentration in the GaN wells, the full width at half maximum of the (102) rocking curves decreas...

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Bibliographic Details
Published in:Chinese physics B 2012-07, Vol.21 (7), p.77103-1-077103-5
Main Authors: Zhang, Wei, Xue, Jun-Shuai, Zhou, Xiao-Wei, Zhang, Yue, Liu, Zi-Yang, Zhang, Jin-Cheng, Hao, Yue
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Diffraction
Doping
Gallium nitrides
Superlattices
Surface roughness
Threading dislocations
Wells
X-rays
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Summary:An AlGaN/GaN superlattice grown on the top of a GaN buffer induces the broadening of the full width at half maximum of (102) and (002) X-ray diffraction rocking curves. With an increase in the Si-doped concentration in the GaN wells, the full width at half maximum of the (102) rocking curves decreases, while that of the (002) rocking curves increases. A significant increase of the full width at the half maximum of the (002) rocking curves when the doping concentration reaches 2.5 x 10 super(19) cm super(-3) indicates the substantial increase of the inclined threading dislocation. High level doping in the AlGaN/GaN superlattice can greatly reduce the biaxial stress and optimize the surface roughness of the structures grown on the top of it.
ISSN:1674-1056
1741-4199
DOI:10.1088/1674-1056/21/7/077103