Quantum simulation study of double gate hetero gate dielectric and LDD doping graphene nanoribbon p-i-n tunneling FETs

We perform a theoretical study of the effects of the lightly doped drain （LDD） and high-k dielectric on the performances of double gate p-i-n tunneling graphene nanoribbon field effect transistors （TFETs）. The models are based on non-equilibrium Green＇s functions （NEGF） solved self-consistently with...

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Bibliographic Details
Published in:Journal of semiconductors 2014-06, Vol.35 (6), p.47-52
Main Author: 王伟 岳工舒 杨晓 张露 张婷
Format: Article
Language:English
Subjects:
Devices
Dielectrics
Doping
Gates
Graphene
LDD
Logic
Nanostructure
Semiconductors
Tunneling
双门
场效应晶体管
掺杂石墨
栅介质
纳米带
量子模拟
隧道
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Summary:We perform a theoretical study of the effects of the lightly doped drain （LDD） and high-k dielectric on the performances of double gate p-i-n tunneling graphene nanoribbon field effect transistors （TFETs）. The models are based on non-equilibrium Green＇s functions （NEGF） solved self-consistently with 3D-Poisson＇s equations. For the first time, hetero gate dielectric and single LDD TFETs （SL-HTFETs） are proposed and investigated. Simulation results show SL-HTFETs can effectively decrease leakage current, sub-threshold swing, and increase on-off current ratio compared to conventional TFETs and Si-based devices; the SL-HTFETs from the 3p ＋ 1 family have better switching characteristics than those from the 3p family due to smaller effective masses of the former. In addition, comparison of scaled performances between SL-HTFETs and conventional TFETs show that SL-HTFETs have better scaling properties than the conventional TFETs, and thus could be promising devices for logic and ultra-low power applications.
ISSN:1674-4926
DOI:10.1088/1674-4926/35/6/064006