Graphene-Based Topological Insulator with an Intrinsic Bulk Band Gap above Room Temperature

Topological insulators (TIs) represent a new quantum state of matter characterized by robust gapless states inside the insulating bulk gap. The metallic edge states of a two-dimensional (2D) TI, known as the quantum spin Hall (QSH) effect, are immune to backscattering and carry fully spin-polarized...

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Bibliographic Details
Published in:Nano letters 2013-12, Vol.13 (12), p.6251-6255
Main Authors: Kou, Liangzhi, Yan, Binghai, Hu, Feiming, Wu, Shu-Chun, Wehling, Tim O, Felser, Claudia, Chen, Changfeng, Frauenheim, Thomas
Format: Article
Language:English
Subjects:
Applied sciences
Bismuth - chemistry
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Conduction band
Cross-disciplinary physics: materials science
rheology
Devices
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronics
Exact sciences and technology
Fullerenes and related materials
diamonds, graphite
Graphene
Graphite - chemistry
Insulators
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics
Materials science
Membranes, Artificial
Nanostructure
Nanostructures - chemistry
Physics
Quantum Dots - chemistry
Selenium - chemistry
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Specific materials
Surface Properties
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Temperature
Topology
Two dimensional
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Summary:Topological insulators (TIs) represent a new quantum state of matter characterized by robust gapless states inside the insulating bulk gap. The metallic edge states of a two-dimensional (2D) TI, known as the quantum spin Hall (QSH) effect, are immune to backscattering and carry fully spin-polarized dissipationless currents. However, existing 2D TIs realized in HgTe and InAs/GaSb suffer from small bulk gaps (
ISSN:1530-6984
1530-6992
DOI:10.1021/nl4037214