Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon

Strain-compensated Ge/Si0.15Ge0.85 multiple quantum wells were grown on an Si0.1 Ge0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n＋-Si（001） substrate. Photoluminescence measurements were performed at room temperature, and the quantum confinement effect of th...

Full description

Saved in:
Bibliographic Details
Published in:Chinese physics B 2012, Vol.21 (1), p.493-498
Main Author: 胡炜玄 成步文 薛春来 张广泽 苏少坚 左玉华 王启明
Format: Article
Language:English
Subjects:
Germanium
Luminescence
Mathematical analysis
Photoluminescence
Quantum confinement
Quantum wells
Silicon germanides
Temperature dependence
Ultrahigh vacuum
化学气相沉积技术
多重量子井
室温光致发光
应变补偿
直接带隙
硅片
硅（001）
量子限制效应
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Strain-compensated Ge/Si0.15Ge0.85 multiple quantum wells were grown on an Si0.1 Ge0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n＋-Si（001） substrate. Photoluminescence measurements were performed at room temperature, and the quantum confinement effect of the direct-bandgap transitions of a Ge quantum well was observed, which is in good agreement with the calculated results. The luminescence mechanism was discussed by recombination rate analysis and the temperature dependence of the luminescence spectrum.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/1/017805