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Total dose effects on the matching properties of deep submicron MOS transistors

Based on 0.18 μm MOS transistors, for the first time, the total dose effects on the matching properties of deep submicron MOS transistors are studied. The experimental results show that the total dose radiation magnifies the mismatch among identically designed MOS transistors. In our experiments, as...

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Bibliographic Details
Published in:Journal of semiconductors 2014-06, Vol.35 (6), p.53-57
Main Author: 王育新 胡蓉彬 李儒章 陈光柄 付东兵 陆妩
Format: Article
Language:English
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Summary:Based on 0.18 μm MOS transistors, for the first time, the total dose effects on the matching properties of deep submicron MOS transistors are studied. The experimental results show that the total dose radiation magnifies the mismatch among identically designed MOS transistors. In our experiments, as the radiation total dose rises to 200 krad, the threshold voltage and drain current mismatch percentages of NMOS transistors increase from 0.55% and 1.4% before radiation to 17.4% and 13.5% after radiation, respectively. PMOS transistors seem to be resistant to radiation damage. For all the range of radiation total dose, the threshold voltage and drain current mismatch percentages of PMOS transistors keep under 0.5% and 2.72%, respectively.
ISSN:1674-4926
DOI:10.1088/1674-4926/35/6/064007