Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs

The hysteresis effect in the output characteristics,originating from the floating body effect,has been measured in partially depleted（PD） silicon-on-insulator（SOI） MOSFETs at different back-gate biases.I D hysteresis has been developed to clarify the hysteresis characteristics.The fabricated devices...

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Bibliographic Details
Published in:Chinese physics B 2012-05, Vol.21 (5), p.473-478, Article 056602
Main Author: 罗杰馨 陈静 周建华 伍青青 柴展 余涛 王曦
Format: Article
Language:English
Subjects:
Bias
Depletion
Devices
Gates
Hysteresis
MOSFET
MOSFETs
SOI
栅偏压
浮体效应
滞后效应
硅绝缘体
输出特性
迟滞特性
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Summary:The hysteresis effect in the output characteristics,originating from the floating body effect,has been measured in partially depleted（PD） silicon-on-insulator（SOI） MOSFETs at different back-gate biases.I D hysteresis has been developed to clarify the hysteresis characteristics.The fabricated devices show the positive and negative peaks in the I D hysteresis.The experimental results show that the I D hysteresis is sensitive to the back gate bias in 0.13-渭m PD SOI MOSFETs and does not vary monotonously with the back-gate bias.Based on the steady-state Shockley-Read-Hall（SRH） recombination theory,we have successfully interpreted the impact of the back-gate bias on the hysteresis effect in PD SOI MOSFETs.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/5/056602