Laser SEU sensitivity mapping of deep submicron CMOS SRAM

The pulsed laser facility for SEU sensitivity mapping is utilized to study the SEU sensitive regions of a 0.18/zm CMOS SRAM cell. Combined with the device layout micrograph, SEU sensitivity maps of the SRAM cell are obtained. TCAD simulation work is performed to examine the SEU sensitivity character...

Full description

Saved in:
Bibliographic Details
Published in:Journal of semiconductors 2014-06, Vol.35 (6), p.76-79
Main Author: 余永涛 封国强 陈睿 韩建伟
Format: Article
Language:English
Subjects:
CMOS
Devices
Lasers
Mapping
Photomicrographs
Semiconductors
SEU
Simulation
SRAM单元
Static random access memory
敏感性
映射
显微照片
深亚微米CMOS
深亚微米技术
脉冲激光
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The pulsed laser facility for SEU sensitivity mapping is utilized to study the SEU sensitive regions of a 0.18/zm CMOS SRAM cell. Combined with the device layout micrograph, SEU sensitivity maps of the SRAM cell are obtained. TCAD simulation work is performed to examine the SEU sensitivity characteristics of the SRAM cell. The laser mapping experiment results are discussed and compared with the electron micrograph information of the SRAM cell and the TCAD simulation results. The results present that the test technique is reliable and of high mapping precision for the deep submicron technology device.
ISSN:1674-4926
DOI:10.1088/1674-4926/35/6/064011