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Electrical switching of quantum tunneling through p-n junction in a quantum spin Hall bar
We demonstrate theoretically electrical switching of the edge state transport via a transverse electric field in a quantum spin Hall bar. By tuning the electric fields, the Fermi energy and the gate voltage, the edge channels in the both topological insulator (TI)/band insulator (BI) and TI/TI p-n j...
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Published in: | Journal of applied physics 2013-02, Vol.113 (5) |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We demonstrate theoretically electrical switching of the edge state transport via a transverse electric field in a quantum spin Hall bar. By tuning the electric fields, the Fermi energy and the gate voltage, the edge channels in the both topological insulator (TI)/band insulator (BI) and TI/TI p-n junctions can be transited from opaque to transparent. This electrical switching behavior offers us an efficient way to control the topological edge state transport which is robust against the local perturbation. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.4790325 |