Effects of gate-buffer combined with a p-type spacer structure on silicon carbide metal-semiconductor field-effect transistors

• Published in: Chinese physics B 2012, Vol.21 (1), p.426-432
• Main Author: 宋坤 柴常春 杨银堂 陈斌 张现军 马振洋
• Format: Article
• Language: English
• Subjects: Channels; Devices; Electric power generation; Field effect transistors; Gates; Mathematical models; MESFETs; MESFET器件; Silicon carbide; Spacers; 垫片; 最高振荡频率; 碳化硅; 结构相; 缓冲作用; 金属氧化物半导体场效应晶体管
• ISSN: 1674-1056; 2058-3834; 1741-4199
• DOI: 10.1088/1674-1056/21/1/017202

An improved structure of silicon carbide metal-semiconductor field-effect transistors （MESFET） is proposed for high power microwave applications. Numerical models for the physical and electrical mechanisms of the device are presented, and the static and dynamic electrical performances are analysed. By comparison with the conventional structure, the proposed structure exhibits a superior frequency response while possessing better DC characteristics. A p-type spacer layer, inserted between the oxide and the channel, is shown to suppress the surface trap effect and improve the distribution of the electric field at the gate edge. Meanwhile, a lightly doped n-type buffer layer under the gate reduces depletion in the channel, resulting in an increase in the output current and a reduction in the gate-capacitance. The structural parameter dependences of the device performance are discussed, and an optimized design is obtained. The results show that the maximum saturation current density of 325 mA/mm is yielded, compared with 182 mA/mm for conventional MESFETs under the condition that the breakdown voltage of the proposed MESFET is larger than that of the conventional MESFET, leading to an increase of 79% in the output power density. In addition, improvements of 27% cut-off frequency and 28% maximum oscillation frequency are achieved compared with a conventional MESFET, respectively.