Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature

The annealing behaviour of 400 keV Er ions at a fluence of 2×10^15 cm^-2 implanted into silicon-on-insulator（SOI） samples is investigated by Rutherford backscattering spectrometry of 2.1 MeV He^2＋ ions with a multiple scattering model.It is found that the damage close to the SOI surface is almost re...

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Bibliographic Details
Published in:Chinese physics B 2012-06, Vol.21 (6), p.385-388
Main Author: 秦希峰 李洪珍 李双 冀子武 王绘凝 王凤翔 付刚
Format: Article
Language:English
Subjects:
Affinity
Annealing
Atmospheres
Atomic properties
Backscattering
Diffusion
Erbium
Er离子
Scattering
Spectrometry
卢瑟福背散射
原子扩散
外扩散
绝缘体上硅
表面
退火
高温
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Summary:The annealing behaviour of 400 keV Er ions at a fluence of 2×10^15 cm^-2 implanted into silicon-on-insulator（SOI） samples is investigated by Rutherford backscattering spectrometry of 2.1 MeV He^2＋ ions with a multiple scattering model.It is found that the damage close to the SOI surface is almost removed after being annealed in O2 and N2 atmospheres,successively,at ℃,and that only a small number of the Er atoms segregated to the surface of the SOI sample,whereas a large number of Er atoms diffused to a deeper position because of the affinity of Er for oxygen.For the SOI sample co-implanted with Er and O ions,there is no evident outdiffusion of Er atoms to the SOI surface after being annealed in N2 atmosphere at ℃.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/6/066105