High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films

We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In1−xMnxAs epilayer depends on the Mn concentration x, reaching 82 K for x = 0.105. The substitution of Mn ions at the indium si...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2015-06, Vol.48 (23), p.235002-6
Main Authors: Yuan, Y, Wang, Y, Gao, K, Khalid, M, Wu, C, Zhang, W, Munnik, F, Weschke, E, Baehtz, C, Skorupa, W, Helm, M, Zhou, S
Format: Article
Language:English
Subjects:
Compressive properties
Curie temperature
dilute magnetic semiconductors
Indium
InMnAs
ion implantation
Magnetic anisotropy
Magnetization
Manganese
perpendicular magnetic anisotropy
pulsed laser melting
Pulsed lasers
Strain
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Summary:We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In1−xMnxAs epilayer depends on the Mn concentration x, reaching 82 K for x = 0.105. The substitution of Mn ions at the indium sites induces a compressive strain perpendicular to the InMnAs layer and a tensile strain along the in-plane direction. This gives rise to a large perpendicular magnetic anisotropy, which is often needed for the demonstration of the electrical control of magnetization and for spin-transfer-torque induced magnetization reversal.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/48/23/235002