High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films

We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In1−xMnxAs epilayer depends on the Mn concentration x, reaching 82 K for x = 0.105. The substitution of Mn ions at the indium si...

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Published in:Journal of physics. D, Applied physics Applied physics, 2015-06, Vol.48 (23), p.235002-6
Main Authors: Yuan, Y, Wang, Y, Gao, K, Khalid, M, Wu, C, Zhang, W, Munnik, F, Weschke, E, Baehtz, C, Skorupa, W, Helm, M, Zhou, S
Format: Article
Language:English
Subjects:
Compressive properties
Curie temperature
dilute magnetic semiconductors
Indium
InMnAs
ion implantation
Magnetic anisotropy
Magnetization
Manganese
perpendicular magnetic anisotropy
pulsed laser melting
Pulsed lasers
Strain
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cited_by cdi_FETCH-LOGICAL-c428t-4575c164197462e0bc82ec32b242e898ff1c514cb6a98c5e83fbdefab9ae4c2d3
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container_title Journal of physics. D, Applied physics
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creator Yuan, Y
Wang, Y
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Zhou, S
description We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In1−xMnxAs epilayer depends on the Mn concentration x, reaching 82 K for x = 0.105. The substitution of Mn ions at the indium sites induces a compressive strain perpendicular to the InMnAs layer and a tensile strain along the in-plane direction. This gives rise to a large perpendicular magnetic anisotropy, which is often needed for the demonstration of the electrical control of magnetization and for spin-transfer-torque induced magnetization reversal.
doi_str_mv 10.1088/0022-3727/48/23/235002
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subjects Compressive properties
Curie temperature
dilute magnetic semiconductors
Indium
InMnAs
ion implantation
Magnetic anisotropy
Magnetization
Manganese
perpendicular magnetic anisotropy
pulsed laser melting
Pulsed lasers
Strain
title High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films
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