Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes

Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors （HFETs） were fabricated, and the gate and the source of the HFETs consisted of AlGaN/AlN/CaN Schottky barrier diodes （SBDs）. Based on the measured forward current-voltage and the capacitance-voltage characteristics of the AlGaN/AlN/G...

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Bibliographic Details
Published in:Chinese physics B 2012, Vol.21 (1), p.414-418
Main Author: 曹芝芳 林兆军 吕元杰 栾崇彪 于英霞 陈弘 王占国
Format: Article
Language:English
Subjects:
AlGaN
Aluminum gallium nitrides
Aluminum nitride
Barriers
Diodes
Electron mobility
Gallium nitrides
Mathematical analysis
Power consumption
Two dimensional
串联电阻
氮化铝
氮化镓
测定
肖特基二极管
肖特基势垒二极管
肖特基接触
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Summary:Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors （HFETs） were fabricated, and the gate and the source of the HFETs consisted of AlGaN/AlN/CaN Schottky barrier diodes （SBDs）. Based on the measured forward current-voltage and the capacitance-voltage characteristics of the AlGaN/AlN/GaN SBDs, the series resistance under the Schottky contacts （Rs） was calculated using the method of power consumption, which has been proved to be valid. Finally, the method of power consumption for calculating RS was successfully used to study the two-dimensional electron gas electron mobility for a series of circular AlGaN/AlN/GaN SBDs. It is shown that the series resistance under the Schottky contacts cannot be neglected and is important for analysing and characterizing the AIGaN/AIN/GaN SBDs and the AlGaN/AlN/GaN HFETs.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/1/017103