Efficient stress-relaxation in InGaN/GaN light-emitting diodes using carbon nanotubes

A facile method to facilitate epitaxial lateral overgrowth (ELO) of gallium nitride (GaN) was developed by using single-walled carbon nanotubes (SWCNTs). High-quality GaN was achieved on sapphire by simply coating the SWCNTs as an intermediate layer for stress and defect mitigation. SWCNTs maintaine...

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Bibliographic Details
Published in:Nanoscale 2015-10, Vol.7 (37), p.15099-15105
Main Authors: Park, Ah Hyun, Seo, Tae Hoon, Chandramohan, S, Lee, Gun Hee, Min, Kyung Hyun, Lee, Seula, Kim, Myung Jong, Hwang, Yong Gyoo, Suh, Eun-Kyung
Format: Article
Language:English
Subjects:
Edge dislocations
Gallium nitrides
Indium gallium nitrides
Light-emitting diodes
Nanostructure
Nitrides
Sapphire
Single wall carbon nanotubes
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Summary:A facile method to facilitate epitaxial lateral overgrowth (ELO) of gallium nitride (GaN) was developed by using single-walled carbon nanotubes (SWCNTs). High-quality GaN was achieved on sapphire by simply coating the SWCNTs as an intermediate layer for stress and defect mitigation. SWCNTs maintained their integrity at high reaction temperature and led to suppression of edge dislocations and biaxial stress relaxation by up to 0.32 GPa in a GaN template layer. InGaN/GaN multi-quantum-well light-emitting diodes (LEDs) on this high-quality GaN template offered enhanced internal quantum efficiency and light output power with reduced efficiency droop. The method developed here has high potential to replace current ELO methods such as patterned sapphire substrates or buffer layers like SiO2 and SiNx.
ISSN:2040-3364
2040-3372
DOI:10.1039/c5nr04239a