Enhancement of electric-field-induced change of magnetic anisotropy by interface engineering of MgO magnetic tunnel junctions

Electric-field-induced modification of magnetic anisotropy is studied using tunnel magnetoresistance of the Co40Fe40B20/ MgO/ Co40Fe40B20 and Co40Fe40B20/ Hf (0.08 nm)/ MgO/ Co40Fe40B20 magnetic tunnel junctions. In both systems, the interfacial perpendicular magnetic anisotropy is increased with in...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2015-06, Vol.48 (22), p.225002-6
Main Authors: Bonaedy, Taufik, Choi, Jun Woo, Jang, Chaun, Min, Byoung-Chul, Chang, Joonyeon
Format: Article
Language:English
Subjects:
electric field control of magnetism
Electric fields
Electron density
Hafnium
Insertion
Magnesium oxide
Magnetic anisotropy
spintronics
Tunnel junctions
Tunnel magnetoresistance
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Summary:Electric-field-induced modification of magnetic anisotropy is studied using tunnel magnetoresistance of the Co40Fe40B20/ MgO/ Co40Fe40B20 and Co40Fe40B20/ Hf (0.08 nm)/ MgO/ Co40Fe40B20 magnetic tunnel junctions. In both systems, the interfacial perpendicular magnetic anisotropy is increased with increasing electron density at the MgO interface. A quantitative comparison between the two systems reveals that the change of magnetic anisotropy energy with electric field is significantly enhanced in Co40Fe40B20/ Hf/ MgO/ Co40Fe40B20 compared to Co40Fe40B20/ MgO/ Co40Fe40B20. The sub-monolayer Hf insertion at the Co40Fe40B20/MgO interface turns out to be critical to the enhanced electric field control of the magnetic anisotropy, indicating the interface sensitive nature of the effect.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/48/22/225002