Structural and Giant Magneto-impedance properties of Cr-incorporated Co–Fe–Si–B amorphous microwires

• Published in: Journal of magnetism and magnetic materials 2012-04, Vol.324 (8), p.1551-1556
• Main Authors: Sarkar, Partha, Basu Mallick, A., Roy, R.K., Panda, A.K., Mitra, A.
• Format: Article
• Language: English
• Subjects: Amorphous; Chromium; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Crystallization; Curie temperature; Exact sciences and technology; Ferromagnetism; Giant magneto-impedance; Giant magnetoresistance; Iron; Magnetic properties and materials; Magnetism; Magnetoimpedance; Magnetomechanical and magnetoelectric effects, magnetostriction; Magnetostriction; Magnetotransport phenomena, materials for magnetotransport; Microwires; Physics; Quenching
• ISSN: 0304-8853
• DOI: 10.1016/j.jmmm.2011.11.052

The investigation is focused on the effect of Cr incorporation for Co/Fe in (Co0.5Fe0.5)78−xCrxSi8B14 (x=0–12) amorphous microwires of 110μm diameter prepared by in-water quenching technique. The rise in crystallization onset TX1 with Cr addition revealed the elemental contribution against devitrification and a consequent thermal stability. Cr is unfavorable towards ferromagnetic ordering leading to a linear drop in Curie temperature Tca with its rise in concentration. The presence of low Cr content upto Cr-4at.% has been effective in drastically improving the Giant magneto-impedance (GMI) property. Cr content in the range of 4≤X≤10 has low magnetostriction and maximum field sensitivity in the as-quenched state. The GMI properties are further improved after annealing treatment. High content of Cr>10 is found to be deleterious towards GMI behavior and its consequent application as sensor material. ► Cr incorporation in CoFeSiB alloy enhanced thermal stability against devitrification. ► Optimal Cr content induced low magnetostriction in the rapidly quenched microwires. ► High GMI ratio and field sensitivity was obtained with optimum Cr in the microwires. ► Annealing treatment at 725K for 15min improved the GMI response of microwires.