Semi-insulating GaAs detectors optimized for fast neutron detection

Semi-insulating (SI) GaAs detectors with a HDPE (High Density PolyEthylene) conversion layer were optimized for detection of fast neutrons (from 0.5 MeV to 12 MeV). Based on previous simulations of neutron transport in HDPE and SI GaAs carried out by the Monte Carlo radiation transport computer code...

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Bibliographic Details
Published in:Journal of instrumentation 2013-03, Vol.8 (3), p.1-6
Main Authors: Sagatova, A, Zat'ko, B, Sedlackova, K, Necas, V, Dubecky, F, Bohacek, P, Chodak, I
Format: Article
Language:English
Subjects:
Computer simulation
Conversion
Detectors
Fast neutrons
Gallium arsenide
Gallium arsenides
Monte Carlo methods
Polyethylenes
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Summary:Semi-insulating (SI) GaAs detectors with a HDPE (High Density PolyEthylene) conversion layer were optimized for detection of fast neutrons (from 0.5 MeV to 12 MeV). Based on previous simulations of neutron transport in HDPE and SI GaAs carried out by the Monte Carlo radiation transport computer code MCNPX (Monte Carlo N-Particle eXtended, version 2.5.0) we used a SI GaAs wafer with a larger thickness of 270 mu m. The area of a single AuZn Schottky contact was enlarged from 6.25 mm super(2) to 7.36 mm super(2). Thanks to the pixel structure of the new metallization the breakdown voltage increased from 60 V to 280 V as deduced from the measured I - V characteristics. Various thicknesses of HDPE layers in the range from 100 mu m to 2000 mu m were used with SI GaAs detectors for neutron conversion. The measured relative detection efficiency for fast neutrons using SI GaAs detectors with various HDPE thicknesses varied from 0.07 to 0.12% at lower applied voltages, with a maximum for a 500 mu m thick conversion layer.
ISSN:1748-0221
1748-0221
DOI:10.1088/1748-0221/8/03/C03016