An optical study of the D-D neutron irradiation-induced defects in Co-and Cu-doped ZnO wafers

• Published in: Chinese physics B 2013-03, Vol.22 (3), p.385-392
• Main Author: 王云波 李公平 许楠楠 潘小东
• Format: Article
• Language: English
• Subjects: Copper; Crystal defects; Disorders; Doping; Irradiation; Level (quantity); Wafers; Zinc; Zinc oxide; ZnO; 中子照射; 光学; 半导体晶片; 掺杂浓度; 晶圆; 缺陷; 铜掺杂
• ISSN: 1674-1056; 2058-3834; 1741-4199
• DOI: 10.1088/1674-1056/22/3/036102

Room-temperature photoluminescence and optical transmittance spectroscopy of Co-doped（1×1014,5×1016,and 1×1017cm-2） and Cu-doped（5×1016cm-2） ZnO wafers irradiated by D-D neutrons（fluence of 2.9×1010 cm-2） have been investigated.After irradiation,the Co or Cu metal and oxide clusters in doped ZnO wafers are dissolved,and the wu¨rtzite structure of ZnO substrate for each sample remains unchanged and keeps in high c-axis preferential orientation.The degree of irradiation-induced crystal disorder reflected from the absorption band tail parameter（E0） is far greater for doped ZnO than the undoped one.Under the same doping concentration,the Cu-doped ZnO wafer has much higher irradiation-induced disorder than the Co-doped one.Photoluminescence measurements indicate that the introduction rate of both the zinc vacancy and the zinc interstitial is much higher for the doped ZnO wafer with a high doping level than the undoped one.In addition,both crystal lattice distortion and defect complexes are suggested to be formed in doped ZnO wafers.Consequently,the Co-or Cu-doped ZnO wafer（especially with a high doping level） exhibits very low radiation hardness compared with the undoped one,and the Cu-doped ZnO wafer is much less radiation-hard than the Co-doped one.