Two-dimensional threshold voltage model of a nanoscale silicon-on-insulator tunneling field-effect transistor

The tunneling field-effect transistor（TFET） is a potential candidate for the post-CMOS era.In this paper,a threshold voltage model is developed for this new kind of device.First,two-dimensional（2D） models are used to describe the distributions of potential and electric field in the channel and two d...

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Bibliographic Details
Published in:Chinese physics B 2013-03, Vol.22 (3), p.528-533
Main Author: 李妤晨 张鹤鸣 张玉明 胡辉勇 王斌 娄永乐 周春宇
Format: Article
Language:English
Subjects:
Computer simulation
Devices
Field effect transistors
Mathematical models
Nanostructure
Semiconductor devices
Threshold voltage
Tunneling
Two dimensional
二维
场效应晶体管
电压模型
移动设备
纳米级
绝缘体上硅
阈值电压
隧道
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Summary:The tunneling field-effect transistor（TFET） is a potential candidate for the post-CMOS era.In this paper,a threshold voltage model is developed for this new kind of device.First,two-dimensional（2D） models are used to describe the distributions of potential and electric field in the channel and two depletion regions.Then based on the physical definition of threshold voltage for the nanoscale TFET,the threshold voltage model is developed.The accuracy of the proposed model is verified by comparing the calculated results with the 2D device simulation data.It has been demonstrated that the effects of varying the device parameters can easily be investigated using the model presented in this paper.This threshold voltage model provides a valuable reference to TFET device design,simulation,and fabrication.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/3/038501