Electronic states and shapes of silicon quantum dots

A curviform surface breaks the symmetrical shape of silicon quantum dots on which some bonds can produce localized electronic states in the bandgap. The calculation results show that the bonding energy and electronic states of silicon quantum dots are different on various curved surfaces, for exampl...

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Bibliographic Details
Published in:Chinese physics B 2013-06, Vol.22 (6), p.385-388, Article 064207
Main Author: 黄伟其 苗信建 黄忠梅 陈汉琼 苏琴
Format: Article
Language:English
Subjects:
Bonding
Bridges (structures)
Curved
Electron states
Emission
Mathematical analysis
Quantum dots
Silicon
Surface chemistry
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Summary:A curviform surface breaks the symmetrical shape of silicon quantum dots on which some bonds can produce localized electronic states in the bandgap. The calculation results show that the bonding energy and electronic states of silicon quantum dots are different on various curved surfaces, for example, a Si-O-Si bridge bond on curved surface provides localized levels in bandgap and its bonding energy is shallower than that on the facet. The red-shifting ofthe photoluminescence spectrum on smaller silicon quantum dots can be explained by the curved surface effect. Experiments demonstrate that silicon quantum dots are activated for emission due to the localized levels provided by the curved surface effect.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/6/064207