Paper No P23: Effect on Electrical Performance TiO sub(x) Doped InZnO Thin-Film Transistor (TFT)

We investigated the electrical performance of TiO sub(x)-IZO Thin-Film Transistor (TFT) changing the target composition ratio of IZO, and Radio-Frequency (RF) power of Titanium target. Titanium and IZO target were co-sputtered by using RF magnetron co-sputtering system. The samples were postannealed...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2015-09, Vol.46 (S1), p.90-90
Main Authors: Park, Chanhee, Lim, Yooseong, Ha, Seungsoo, Im, Yongjin, Jang, Minhyung, Choi, Seung-il, Park, Ji-in, Yi, Moonsuk
Format: Article
Language:English
Subjects:
Electric power generation
Semiconductor devices
Technical papers
Thin film transistors
Titanium
Titanium dioxide
Titanium oxides
Transistors
Vacancies
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Summary:We investigated the electrical performance of TiO sub(x)-IZO Thin-Film Transistor (TFT) changing the target composition ratio of IZO, and Radio-Frequency (RF) power of Titanium target. Titanium and IZO target were co-sputtered by using RF magnetron co-sputtering system. The samples were postannealed in the air, at 300 degree C for 1 h. When the formation of TiO sub(x)-IZO rises in the film, it causes the oxygen vacancy in the film not to generate, and to suppress the carrier concentration.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.10505