Lead zirconate titanate behaviors in an LDMOS

The behaviors of lead zirconate titanate （PZT） deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 350 V, but also excellent memory behaviors. A drain current–gate voltage （ID-VG） memor...

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Bibliographic Details
Published in:Chinese physics B 2013-07, Vol.22 (7), p.578-581
Main Author: 翟亚红 李威 李平 李俊宏 胡滨 霍伟荣 范雪 王刚
Format: Article
Language:English
Subjects:
Breakdown
Circuits
Deposition
Devices
Drains
Electric potential
Energy conversion
LDMOS
Lead zirconate titanates
Voltage
击穿电压
电源转换电路
能量转换系统
行为
金属氧化物半导体
锆钛酸铅
高压设备
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Summary:The behaviors of lead zirconate titanate （PZT） deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 350 V, but also excellent memory behaviors. A drain current–gate voltage （ID-VG） memory window of about 2.2 V is obtained at the sweep voltages of ±10 V for the 350-V laterally diffused metal oxide semiconductor （LDMOS）. The retention time of about 270 s is recorded for the LDMOS through a controlled ID-VG measurement. The LDMOS with memory behaviors has potential to be applied in future power conversion circuits to boost the performance of the energy conversion system.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/7/078501