Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

The performance of a multiple quantum well （MQW） InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the sola...

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Bibliographic Details
Published in:Chinese physics B 2013-08, Vol.22 (8), p.698-701, Article 088401
Main Author: 赵璧君 陈鑫 任志伟 童金辉 王幸福 李丹伟 卓祥景 章俊 易翰翔 李述体
Format: Article
Language:English
Subjects:
Conversion
Current carriers
Gallium nitrides
Illumination
Indium
Indium gallium nitrides
InGaN
Photovoltaic cells
Quantum wells
Solar cells
光谱响应
外部量子效率
多量子阱
太阳能电池
性能
短路电流密度
铟含量
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Summary:The performance of a multiple quantum well （MQW） InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density （Jsc） and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/8/088401