Electron inelastic mean free paths in solids： A theoretical approach

In the present paper, the inelastic mean free path （IMFP） of incident electrons is calculated as a function of energy for silicon （Si）, oxides of silicon （SiO2）, SiO, and A1203 in bulk form by employing atomic/molecular inelastic cross sections derived by using a semi-empirical quantum mechanical me...

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Bibliographic Details
Published in:Chinese physics B 2012-09, Vol.21 (9), p.208-214
Main Authors: Pandya, Siddharth H., Vaishnav, B.G., Joshipura, K.N.
Format: Article
Language:English
Subjects:
Aluminum oxide
Cross sections (physics)
Energy use
Mathematical analysis
Mean free path
Oxides
Quantum mechanics
Silicon
Silicon dioxide
SiO2
二氧化硅
固体
平均
电子
自由
路径
非弹性
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Summary:In the present paper, the inelastic mean free path （IMFP） of incident electrons is calculated as a function of energy for silicon （Si）, oxides of silicon （SiO2）, SiO, and A1203 in bulk form by employing atomic/molecular inelastic cross sections derived by using a semi-empirical quantum mechanical method developed earlier. A general agreement of the present results is found with most of the available data. It is of great importance that we have been able to estimate the minimum IMFP, which corresponds to the peak of inelastic interactions of incident electrons in each solid investigated. New results are presented for SiO, for which no comparison is available. The present work is important in view of the lack of experimental data on the IMFP in solids.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/9/093402