Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer

Blue InGaN light-emitting diodes (LEDs) with a conventional electron blocking layer (EBL), a common n-AlGaN hole blocking layer (HBL), and an n-AlGaN HBL with gradual Al composition are investigated numerically, which involves analyses of the carrier concentration in the active region, energy band d...

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Bibliographic Details
Published in:Chinese physics B 2013-08, Vol.22 (8), p.88503-1-088503-5
Main Authors: Ding, Bin-Bin, Zhao, Fang, Song, Jing-Jing, Xiong, Jian-Yong, Zheng, Shu-Wen, Zhang, Yun-Yan, Xu, Yi-Qin, Zhou, De-Tao, Yu, Xiao-Peng, Zhang, Han-Xiang, Zhang, Tao, Fan, Guang-Han
Format: Article
Language:English
Subjects:
Aluminum
Blocking
Electrostatic fields
Energy bands
Indium gallium nitrides
Leakage
Light-emitting diodes
Mathematical models
Quantum efficiency
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Summary:Blue InGaN light-emitting diodes (LEDs) with a conventional electron blocking layer (EBL), a common n-AlGaN hole blocking layer (HBL), and an n-AlGaN HBL with gradual Al composition are investigated numerically, which involves analyses of the carrier concentration in the active region, energy band diagram, electrostatic field, and internal quantum efficiency (IQE). The results indicate that LEDs with an n-AlGaN HBL with gradual Al composition exhibit better hole injection efficiency, lower electron leakage, and a smaller electrostatic field in the active region than LEDs with a conventional p-AlGaN EBL or a common n-AlGaN HBL. Meanwhile, the efficiency droop is alleviated when an n-AlGaN HBL with gradual Al composition is used.
ISSN:1674-1056
1741-4199
DOI:10.1088/1674-1056/22/8/088503