A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel

A unified charge-based model for fully depleted silicon-on-insulator （SOI） metal oxide semiconductor field-effect transistors （MOSFETs） is presented. The proposed model is accurate and applicable from intrinsic to heavily doped channels with various structure parameters. The framework starts from th...

Full description

Saved in:
Bibliographic Details
Published in:Chinese physics B 2012-04, Vol.21 (4), p.478-485, Article 047303
Main Author: 张健 何进 周幸叶 张立宁 马玉涛 陈沁 张勖凯 杨张 王睿斐 韩雨 陈文新
Format: Article
Language:English
Subjects:
Channels
Charge density
Depletion
Inversions
Mathematical analysis
Mathematical models
Metal oxide semiconductors
MOSFET
MOSFETs
Semiconductors
SOI
玻尔兹曼方程
电荷模型
绝缘体上硅
通道
重掺杂
金属氧化物半导体场效应晶体管
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A unified charge-based model for fully depleted silicon-on-insulator （SOI） metal oxide semiconductor field-effect transistors （MOSFETs） is presented. The proposed model is accurate and applicable from intrinsic to heavily doped channels with various structure parameters. The framework starts from the one-dimensional Poisson Boltzmann equa- tion, and based on the full depletion approximation, an accurate inversion charge density equation is obtained. With the inversion charge density solution, the unified drain current expression is derived, and a unified terminal charge and intrinsic capacitance model is also derived in the quasi-static case. The validity and accuracy of the presented analytic model is proved by numerical simulations.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/4/047303